2SK1589-T1B-VB 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec 2SK1589-T1B-VB
- Power Dissipation (Pd): 370mW
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 260mA
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8Ω@10V,200mA
- Package: SOT-23-3
- Manufacturer: VBsemi Elec